SSM3K15CT datasheet(2/5 Pages) TOSHIBA

2 / 5 page

SSM3K15CT

2007-11-01

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0

⎯

±1

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 0.1 mA, VGS = 0

⎯

Drain cut-off current

IDSS

VDS = 30 V, VGS = 0

⎯

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.8

⎯

1.5

Forward transfer admittance

⏐Yfs⏐

VDS = 3 V, ID = 10 mA

⎯

ID = 10 mA, VGS = 4 V

⎯

2.2

4.0

Drain-Source ON-resistance

RDS (ON)

ID = 10 mA, VGS = 2.5 V

⎯

4.0

7.0

Input capacitance

Ciss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

7.8

⎯

Reverse transfer capacitance

Crss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

3.6

⎯

Output capacitance

Coss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

8.8

⎯

Turn-on time

ton

⎯

Switching time

Turn-off time

toff

VDD = 5 V, ID = 10 mA,

VGS = 0~5 V

⎯

180

⎯

Switching Time Test Circuit

(a) Test circuit

(b) VIN

Precaution

Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for

this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower

voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)

Take this into consideration when using the device.

ton

90%

10%

0 V

5 V

10%

90%

toff

VDD

VDS (ON)

VDD = 5 V

D.U. <= 1%

Input: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

= 25°C

VDD

Output

Input

5 V

μs

SSM3K15CT датащи(PDF) 2 Page - Toshiba Semiconductor

SSM3K15CT датащи(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL