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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TC74HCT02AP датащи(PDF) 3 Page - Toshiba Semiconductor |
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TC74HCT02AP датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 7 page  TC74HCT02AP/AF/AFN 2007-10-01 3 Electrical Characteristics DC Characteristics Test Condition Ta = 25°C Ta = −40~85°C Characteristics Symbol VCC (V) Min Typ. Max Min Max Unit High-level input voltage VIH ⎯ 4.5~5.5 2.0 ⎯ ⎯ 2.0 ⎯ V Low-level input voltage VIL ⎯ 4.5~5.5 ⎯ ⎯ 0.8 ⎯ 0.8 V IOH = −20 μA 4.5 4.4 4.5 ⎯ 4.4 ⎯ High-level output voltage VOH VIN = VIH or VIL I OH = −4 mA 4.5 4.18 4.31 ⎯ 4.13 ⎯ V IOL = 20 μA 4.5 ⎯ 0.0 0.1 ⎯ 0.1 Low-level output voltage VOL VIN = VIH or VIL I OL = 4 mA 4.5 ⎯ 0.17 0.26 ⎯ 0.33 V Input leakage current IIN VIN = VCC or GND 5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA ICC VIN = VCC or GND 5.5 ⎯ ⎯ 1.0 ⎯ 10.0 μA Quiescent supply current IC Per input: VIN = 0.5 V or 2.4 V Other input: VCC or GND 5.5 ⎯ ⎯ 2.0 ⎯ 2.9 mA AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns) Characteristics Symbol Test Condition Min Typ. Max Unit Output transition time tTLH tTHL ⎯ ⎯ 6 12 ns Propagation delay time tpLH tpHL ⎯ ⎯ 9 15 ns AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns) Test Condition Ta = 25°C Ta = −40~85°C Characteristics Symbol VCC (V) Min Typ. Max Min Max Unit Output transition time tTLH tTHL ⎯ 4.5 5.5 ⎯ ⎯ 8 7 15 13 ⎯ ⎯ 19 16 ns Propagation delay time tpLH tpHL ⎯ 4.5 5.5 ⎯ ⎯ 12 11 18 16 ⎯ ⎯ 23 20 ns Input capacitance CIN ⎯ ⎯ 5 10 ⎯ 10 pF Power dissipation capacitance CPD (Note) ⎯ ⎯ 18 ⎯ ⎯ ⎯ pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD･VCC･fIN + ICC/4 (per gate) |
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