SSM3K04FS datasheet(2/5 Pages) TOSHIBA

номер детали	SSM3K04FS

подробное описание детали	High Speed Switch Applications

PDF	5 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

SSM3K04FS

2007-11-01

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 10 V, VDS = 0

⎯

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 100 μA, VGS = 0

⎯

Drain cut-off current

IDSS

VDS = 20 V, VGS = 0

⎯

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.7

⎯

1.3

Forward transfer admittance

⎪Yfs⎪

VDS = 3 V, ID = 10 mA

⎯

Drain-source ON resistance

RDS (ON)

ID = 10 mA, VGS = 2.5 V

⎯

Input capacitance

Ciss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

11.0

⎯

Reverse transfer capacitance

Crss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

3.3

⎯

Output capacitance

Coss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

9.3

⎯

Turn-on time

ton

VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V

⎯

0.16

⎯

Switching time

Turn-off time

toff

VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V

⎯

0.19

⎯

μs

Gate-source resistor

RGS

VGS = 0~10 V

0.7

1.0

1.3

Switching Time Test Circuit

(a)

Test circuit

(b)

VIN

VGS

(c)

VOUT

VDS

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