TLP627 datasheet(3/8 Pages) TOSHIBA

номер детали	TLP627

подробное описание детали	GaAs IRED & PHOTO-TRANSISTOR

PDF	8 Pages

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 8 page

TLP627,TLP627-2,TLP627-4

2007-10-01

Individual Electrical Characteristics (Ta=25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Forward Voltage

IF = 10 mA

1.0

1.15

1.3

Reverse Current

VR = 5 V

—

μA

Capacitance

V = 0 , f=1MHz

—

Collector-Emitter

Breakdown Voltage

V(BR)CEO

IC = 0.1mA

300

—

Emitter-Collector

Breakdown Voltage

V(BR)ECO

IE = 0.1mA

0.3

—

VCE = 200V

—

200

Collector Dark Current

ICEO

VCE = 200V , Ta = 85°C

—

μA

Capacitance Collector

to Emitter

CCE

V=0 , f=1MHz

—

Coupled Electrical Characteristics (Ta=25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Current Transfer Ratio

IC/IF

IF=1mA , VCE=1V

1000

4000

—

Saturated CTR

IC/IF(sat)

IF=10mA , VCE=1V

500

—

IC=10mA , IF=1mA

—

1.0

Collector-Emitter

Saturation Voltage

VCE(sat)

IC=100mA , IF=10mA

0.3

—

1.2

Isolation Electrical Characteristics (Ta=25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Capacitance Input to Output

VS=0 , f=1MHz

—

0.8

—

Isolation Resistance

VS=500V , R.H.≤60%

×1010

—

AC, 1minute

5000

—

AC, 1second, in oil

—

10000

—

Vrms

Isolation Voltage

BVs

DC, 1 minute, in oil

—

10000

—

Vdc

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