2SA1160

2006-11-09

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1160

Strobe Flash Applications

Medium Power Amplifier Applications

• Low saturation voltage

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−20

V

Collector-emitter voltage

−10

V

Emitter-base voltage

−6

V

DC

−2

Collector current

Pulsed (Note 1)

−4

A

Base current

−2

A

Collector power dissipation

900

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Pulse width

= 10 ms (max), duty cycle = 30% (max)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

TO-92MOD

JEITA

―

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)