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TC74HC07AF датащи(PDF) 4 Page - Toshiba Semiconductor

номер детали TC74HC07AF
подробное описание детали  CMOS Digital Integrated Circuit Silicon Monolithic Hex Buffer (open drain)
PDF  7 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74HC07AF датащи(HTML) 4 Page - Toshiba Semiconductor

  TC74HC07AF Datasheet HTML 1Page - Toshiba Semiconductor TC74HC07AF Datasheet HTML 2Page - Toshiba Semiconductor TC74HC07AF Datasheet HTML 3Page - Toshiba Semiconductor TC74HC07AF Datasheet HTML 4Page - Toshiba Semiconductor TC74HC07AF Datasheet HTML 5Page - Toshiba Semiconductor TC74HC07AF Datasheet HTML 6Page - Toshiba Semiconductor TC74HC07AF Datasheet HTML 7Page - Toshiba Semiconductor  
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TC74HC07AP/AF
2007-10-01
4
AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Test Condition
Ta
= 25°C
Ta
= −40 to
85°C
Characteristics
Symbol
VCC
(V)
Min
Typ.
Max
Min
Max
Unit
Output transition time
tTHL
⎯
2.0
4.5
6.0
⎯
⎯
⎯
30
8
7
75
15
13
⎯
⎯
⎯
95
19
16
ns
Propagation delay
time
tpLZ
RL = 1 kΩ
2.0
4.5
6.0
⎯
⎯
⎯
10
7
6
90
18
15
⎯
⎯
⎯
115
23
20
ns
Propagation delay
time
tpZL
RL = 1 kΩ
2.0
4.5
6.0
⎯
⎯
⎯
17
7
5
90
18
15
⎯
⎯
⎯
115
23
20
ns
Input capacitance
CIN
⎯
⎯
5
10
⎯
10
pF
Output capacitance
COUT
⎯
⎯
3
⎯
⎯
⎯
pF
Power dissipation
capacitance
CPD
(Note)
⎯
⎯
4
⎯
⎯
⎯
pF
Note:
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD･VCC･fIN + ICC/6 (per gate)



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