DF3A8.2FE

2007-11-01

1

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF3A8.2FE

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

* This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

• The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Characteristics

Symbol

Rating

Unit

Power dissipation

P

100

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Zener voltage

7.7

8.2

8.7

V

Dynamic impedance

⎯

⎯

20

Ω

Reverse current

⎯

⎯

0.5

μA

Terminal capacitance

(between Cathode and Anode)

―

38

⎯

pF

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

± 30 kV

Criterion: No damage to device elements

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

1-2SA1A

Weight: 0.0023 g (typ.)