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TC7SH00FS датащи(PDF) 1 Page - Toshiba Semiconductor |
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TC7SH00FS датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() TC7SH00FS 2007-11-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00FS 2 Input NAND Gate Features • High speed: tpd = 3.7 ns (typ.) at VCC = 5 V, 15 pF • Low power dissipation: ICC = 2 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Wide operating voltage range: VCC (opr.) = 2~5.5 V • 5.5-V tolerant inputs Marking Pin Assignment (top view) Absolute Maximum Ratings ( Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5~7 V DC input voltage VIN −0.5~7 V DC output voltage VOUT −0.5~VCC + 0.5 V Input diode current IIK −20 mA Output diode current IOK ±20 mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 50 mW Storage temperature Tstg −65~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (fSV) Weight : 0.001 g (Typ.) Product Name H 1 IN A GND IN B 1 2 3 5 4 VCC OUT Y SON5-P-0.35 |
Аналогичный номер детали - TC7SH00FS |
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Аналогичное описание - TC7SH00FS |
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