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CMS14 датащи(PDF) 1 Page - Toshiba Semiconductor

номер детали CMS14
подробное описание детали  Switching Mode Power Supply Applications
PDF  5 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

CMS14 датащи(HTML) 1 Page - Toshiba Semiconductor

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CMS14
2006-11-13
1
TOSHIBA Schottky Barrier Diode
CMS14
Switching Mode Power Supply Applications
(Output voltage:
≤12 V)
DC/DC Converter Applications
• Forward voltage: VFM = 0.58 V (max)
• Average forward current: IF (AV) = 2.0 A
• Repetitive peak reverse voltage: VRRM = 60 V
• Suitable for compact assembly due to small surface-mount package
“M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
60
V
Average forward current
IF (AV)
2.0 (Note 1)
A
Non-repetitive peak surge current
IFSM
40 (50 Hz)
A
Junction temperature
Tj
−40~150
°C
Storage temperature range
Tstg
−40~150
°C
Note 1: Tℓ
= 112°C
Device mounted on a ceramic board
Board size: 50 mm
× 50 mm
Soldering size: 2 mm
× 2 mm
Board thickness: 0.64 t
Rectangular waveform (
α = 180°), VR = 30 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VFM (1)
IFM = 1.0 A (pulse test)
0.45
Peak forward voltage
VFM (2)
IFM = 2.0 A (pulse test)
0.53
0.58
V
IRRM (1)
VRRM = 5 V (pulse test)
0.6
Peak repetitive reverse current
IRRM (2)
VRRM = 60 V (pulse test)
25
200
μA
Junction capacitance
Cj
VR = 10 V, f = 1.0 MHz
77
pF
Device mounted on a ceramic board
(board size: 50 mm
× 50 mm)
(soldering land: 2 mm
× 2 mm)
(board thickness: 0.64 t)
60
Device mounted on a glass-epoxy board
(board size: 50 mm
× 50 mm)
(soldering land: 6 mm
× 6 mm)
(board thickness: 1.6 t)
135
Thermal resistance
(junction to ambient)
Rth (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
× 50 mm)
(soldering land: 2.1 mm
× 1.4 mm)
(board thickness: 1.6 t)
210
°C/W
Thermal resistance
(junction to lead)
Rth (j-ℓ)
16
°C/W
Unit: mm
JEDEC
JEITA
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)


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