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PRELIMINARY DATA: OM6501ST
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V
(BR)CES Collector Emitter
500
V
V
CE = 0
Breakdown Voltage
I
C = 250 µA
I
CES
Zero Gate Voltage
0.25
mA
V
CE = Max. Rat., VGE = 0
Drain Current
1.0
mA
V
CE = 0.8 Max. Rat., VGE = 0
T
C = 125°C
I
GES
Gate Emitter Leakage
±100
nA
V
GE = ±20 V
Current
V
CE = 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
2.0
4.0
V
V
CE = VGE, IC = 250 µA
V
CE(sat)
Collector Emitter
3.0
V
V
GE = 15 V, IC = 5 A
Saturation Voltage
T
C = 25°C
V
CE(sat)
Collector Emitter
2.8
3.0
V
V
GE = 15 V, IC = 5 A
Saturation Voltage
T
C = 100°C
Dynamic
g
fs
Forward Transductance
2.0
S
V
CE = 20 V, IC = 5 A
C
ies
Input Capacitance
260
pF
V
GE = 0
C
oes
Output Capacitance
50
pF
V
CE = 25 V
C
res
Reverse Transfer Capacitance
20
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
37
nS
V
CC = 400 V, IC = 5 A
t
r
Rise Time
150
nS
V
GE = 15 V, Rg = 47
Switching-Inductive Load
t
r(Volt)
Off Voltage Rise Time
.35
µS
V
CEclamp = 400 V, IC = 5 A
t
f
Fall Time
.81
µS
V
GE = 15 V, Rg = 100
t
cross
Cross-Over Time
1.2
µS
L = 0.1 mH, T
j = 100°C
E
off
Turn-Off Losses
.95
mJ
PRELIMINARY DATA: OM6502ST
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V
(BR)CES Collector Emitter
500
V
V
CE = 0
Breakdown Voltage
I
C = 250 µA
I
CES
Zero Gate Voltage
0.25
mA
V
CE = Max. Rat., VGE = 0
Drain Current
1.0
mA
V
CE = 0.8 Max. Rat., VGE = 0
T
C = 125°C
I
GES
Gate Emitter Leakage
±100
nA
V
GE = ±20 V
Current
V
CE = 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
2.0
4.0
V
V
CE = VGE, IC = 250 µA
V
CE(sat)
Collector Emitter
3.0
V
V
GE = 15 V, IC = 10 A
Saturation Voltage
T
C = 25°C
V
CE(sat)
Collector Emitter
2.8
3.0
V
V
GE = 15 V, IC = 10 A
Saturation Voltage
T
C = 100°C
Dynamic
g
fs
Forward Transductance
2.5
S
V
CE = 20 V, IC = 10 A
C
ies
Input Capacitance
950
pF
V
GE = 0
C
oes
Output Capacitance
140
pF
V
CE = 25 V
C
res
Reverse Transfer Capacitance
80
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
150
nS
t
r
Rise Time
1000
nS
V
CC = 400 V, IC = 10 A
T
d(off)
Turn-Off Delay Time
700
nS
V
GE = 15 V, Rg = 100
t
f
Fall Time
1500
nS
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time
1.2
µS
V
CEclamp = 350 V, IC = 10 A
t
f
Fall Time
1.5
µS
V
GE = 15 V, Rg = 100
t
cross
Cross-Over Time
2.0
µS
L = 180 µH, T
j = 100°C
E
off
Turn-Off Losses
4.0
mJ
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