LP4056-02

Aug.-2017

Email: marketing@lowpowersemi.com

www.lowpowersemi.com

Page 4 of 7

Preliminary Datasheet

LP4056

ESD Susceptibility



HBM(Human Body Mode) ---------------------------------------------------------------------------------------------------- 2KV



MM(Machine Mode) ------------------------------------------------------------------------------------------------------------ 200V

Electrical Characteristics

(TA = 25℃. VIN = 5V, unless otherwise noted.)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNITS

VIN

Adapter/USB Voltage Range

3.9

5

6

V

IIN

Input Supply Current

Charge Mode, RISET=10K

300

1000

μA

Standby Mode (Charge Terminated)

50

200

VFLOAT

Regulated Output (Float) Voltage

0℃≤TA≤85℃, IBAT=40mA

4.158

4.2

4.242

V

IBAT

BAT Pin Current

RISET=10K，Current Mode

80

100

120

mA

RISET=2K，Current Mode

400

500

600

RISET=1K，Current Mode

800

1000

1200

Standby Mode, VBAT=4.2V

Sleep Mode, VIN=0V

0

±1

μA

VTRIKL

Trickle Charge Threshold Voltage

RISET=10k, VBAT Rising

2.9

V

VTRHYS

Trickle Charge Hysteresis Voltage

RISET=10K

100

mV

ITRIKL

Trickle charge current

VBAT<VTRIKL, RISET=10K

40

mA

VBAT<VTRIKL, RISET=2K

200

VUV

VIN Undervoltage Lockout Threshold

From VIN Low to High

3.7

3.8

3.9

V

VUVHYS

VIN Undervoltage Lockout Hysteresis

150

200

300

mV

VASD

VIN–VBAT Lockout Threshold Voltage

150

mV

VISET

ISET Pin Voltage

RISET=10K,Charge Mode

1

V

VSTAT1/2

STAT Pin Output Low Voltage

ISTAT1/2=5mA

0.5

V

ISTAT1/2

STAT Pin Weak Pull-Down Current

VSTAT1/2=5V

5

uA

ΔVRECHRG

Recharge Battery Threshold Voltage

VFLOAT-VRECHRG

100

150

200

mV