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HAF1004L датащи(PDF) 3 Page - Renesas Technology Corp

номер детали HAF1004L
подробное описание детали  Silicon P Channel MOS FET Series Power Switching
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF1004L датащи(HTML) 3 Page - Renesas Technology Corp

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HAF1004(L), HAF1004(S)
Rev.5.00, Apr.29.2003, page 3 of 10
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain current
ID1
4—
A
VGS = –3.5 V, VDS = –2 V
Drain current
ID2
–10
mA
VGS = –1.2 V, VDS = –2 V
Drain to source breakdown voltage V(BR)DSS
–60
V
ID = –10 mA, VGS =0
Gate to source breakdown voltage V(BR)GSS
–16
V
IG = –800 µA, VDS =0
Gate to source breakdown voltage V(BR)GSS
2.5
V
IG = 100 µA, VDS =0
IGSS1
–100 µA
VGS = –8 V, VDS =0
IGSS2
–50
µA
VGS = –3.5 V, VDS =0
IGSS3
–1
µA
VGS = –1.2 V, VDS =0
Gate to source leak current
IGSS4
100
µA
VGS = 2.4 V, VDS =0
IGS(OP)1
–0.8
mA
VGS = –8 V, VDS =0
Input current (shut down)
IGS(OP)2
–0.35 —
mA
VGS = –3.5 V, VDS =0
Zero gate voltage drain current
IDSS
–10
µA
VDS = –60 V, VGS = 0
Gate to source cut off voltage
VGS(off)
–1.1
–2.25 V
VDS = –10 V, ID = –1 mA
Forward transfer admittance
|yfs|2
4
S
ID =–2.5 A, VDS =–10 V
Note3
Static drain to source on state
resistance
RDS(on)
140
200
m
ID = –2.5 A, VGS = –10 V
Note3
Static drain to source on state
resistance
RDS(on)
200
340
m
ID = –2.5 A, VGS = –4 V
Note3
Output capacitance
Coss
326
pF
VDS = –10 V, VGS =0, f = 1 MHz
Turn-on delay time
td(on)
—2
µs
Rise time
tr
—7.6
—µs
Turn off delay time
td(off)
—3.2
µs
Fall time
tf
—3.2
—µs
VGS = –5 V, ID= –2.5 A,
RL = 12
Body-drain diode forward voltage
VDF
–0.9
V
IF = –5A, VGS = 0
Body-drain diode reverse recovery
time
trr
—77
ns
IF = –5 A, VGS = 0
diF/dt = 50 A/µs
tos1
—8.4
—ms
VGS = –5 V, VDD = –16 V
Over lord shut down
operation time
note4
tos2
—2.4
—ms
VGS = –5 V, VDD = –24 V
Notes: 3. Pulse test
4. Including the junction temperature rise of the lorded condition



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