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HAF1004L датащи(PDF) 3 Page - Renesas Technology Corp |
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HAF1004L датащи(HTML) 3 Page - Renesas Technology Corp |
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3 / 10 page ![]() HAF1004(L), HAF1004(S) Rev.5.00, Apr.29.2003, page 3 of 10 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain current ID1 4— — A VGS = –3.5 V, VDS = –2 V Drain current ID2 — — –10 mA VGS = –1.2 V, VDS = –2 V Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS =0 Gate to source breakdown voltage V(BR)GSS –16 — — V IG = –800 µA, VDS =0 Gate to source breakdown voltage V(BR)GSS 2.5 — — V IG = 100 µA, VDS =0 IGSS1 — — –100 µA VGS = –8 V, VDS =0 IGSS2 — — –50 µA VGS = –3.5 V, VDS =0 IGSS3 — — –1 µA VGS = –1.2 V, VDS =0 Gate to source leak current IGSS4 — — 100 µA VGS = 2.4 V, VDS =0 IGS(OP)1 — –0.8 — mA VGS = –8 V, VDS =0 Input current (shut down) IGS(OP)2 — –0.35 — mA VGS = –3.5 V, VDS =0 Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0 Gate to source cut off voltage VGS(off) –1.1 — –2.25 V VDS = –10 V, ID = –1 mA Forward transfer admittance |yfs|2 4 — S ID =–2.5 A, VDS =–10 V Note3 Static drain to source on state resistance RDS(on) — 140 200 m Ω ID = –2.5 A, VGS = –10 V Note3 Static drain to source on state resistance RDS(on) — 200 340 m Ω ID = –2.5 A, VGS = –4 V Note3 Output capacitance Coss — 326 ― pF VDS = –10 V, VGS =0, f = 1 MHz Turn-on delay time td(on) —2 ― µs Rise time tr —7.6 —µs Turn off delay time td(off) —3.2 ― µs Fall time tf —3.2 —µs VGS = –5 V, ID= –2.5 A, RL = 12 Ω Body-drain diode forward voltage VDF — –0.9 — V IF = –5A, VGS = 0 Body-drain diode reverse recovery time trr —77 — ns IF = –5 A, VGS = 0 diF/dt = 50 A/µs tos1 —8.4 —ms VGS = –5 V, VDD = –16 V Over lord shut down operation time note4 tos2 —2.4 —ms VGS = –5 V, VDD = –24 V Notes: 3. Pulse test 4. Including the junction temperature rise of the lorded condition |
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