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16FL2C41A датащи(PDF) 2 Page - Toshiba Semiconductor |
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16FL2C41A датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() 16FL2C41A 2006-11-08 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) (Note 1) CHARACTERISTIC SYMBOL TEST CONDITION MIN MAX UNIT Peak Forward Voltage VFM IFM=8A ― 1.3 V Repetitive Peak Reverse Current IRRM VRRM=300V ― 50 μA Reverse Recovery Time trr IF=2.0A di / dt=−50A / μs (Note 2) ― 35 ns Forward Recovery Time tfr IF=1.0A (Note 3) ― 100 ns Thermal Resistance Rth (j−c) Total DC, Junction to Case ― 1.9 °C / W Note 1: A value applied to one cell. Note 2: trr Test Circuit trr Waveform Note 3: tfr Test Circuit tfr Waveform Handling Precaution The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. VRRM: We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the absolute maximum rating of VRRM for a DC circuit and be no greater than 50% of that of VRRM for an AC circuit. VRRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into account designing a device at low temperature. IO: We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IO. Carry out adequate heat design. If you can’t design a circuit with excellent heat radiation, set the margin by using an allowable Tamax-IO curve. This rating specifies the non-repetitive peak current in one cycle of a 50-Hz sine wave, condition angle 180. Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. We recommend that a device be used at a Tj of below 120°C under the worst load and heat radiation conditions. Please refer to the Rectifiers databook for further information. |
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