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TLP4592G датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TLP4592G
подробное описание детали  The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.
PDF  6 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP4592G датащи(HTML) 2 Page - Toshiba Semiconductor

  TLP4592G Datasheet HTML 1Page - Toshiba Semiconductor TLP4592G Datasheet HTML 2Page - Toshiba Semiconductor TLP4592G Datasheet HTML 3Page - Toshiba Semiconductor TLP4592G Datasheet HTML 4Page - Toshiba Semiconductor TLP4592G Datasheet HTML 5Page - Toshiba Semiconductor TLP4592G Datasheet HTML 6Page - Toshiba Semiconductor  
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TLP4592G
2004-07-26
2
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating (Ta >= 25°C)
ΔIF/°C
−0.5
mA/°C
Peak forward current (100
μs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Off-state output terminal voltage
VOFF
350
V
A connection
100
B connection
100
On-state current
C connection
ION
200
mA
A connection
−1.0
B connection
−1.0
On-state current derating
(Ta >= 25°C)
C connection
ΔION/°C
−2.0
mA/°C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min, R.H. <= 60%) (Note 1)
BVS
2500
Vrms
Note 1: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6 are shorted together.
Recommended Operating Conditions
Characteristics
Symbol
Min
Typ.
Max
Unit
Supply voltage
VDD
280
V
Forward current
IF
5
25
mA
On-state current
ION
100
mA
Operating temperature
Topr
−20
65
°C
Circuit Connections
A connection
B connection
C connection
1
2
3
6
5
4
LOAD
AC
or
DC
1
2
3
6
5
4
LOAD
DC
1
2
3
6
5
4
LOAD
DC



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