MT6L77FS datasheet(2/3 Pages) TOSHIBA

2 / 3 page

MT6L77FS

2007-11-01

ELECTRICAL CHARACTERISTICS Q1 (Ta = 25°C)

CHARACTERISTICS

SYMBOL

C O N D I T I O N

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0

⎯

0.1

μA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

⎯

μA

DC Current Gain

hFE

VCE = 1 V, IC = 5 mA

100

⎯

160

⎯

Reverse Transfer Capacitance

Cre (Note)

VCB = 1 V, IE = 0, f = 1 MHz

⎯

0.65

0.9

Transition Frequency

VCE = 1 V, IC = 5 mA

⎯

GHz

⎪S21e⎪

2 (1)

VCE = 1 V, IC = 5 mA, f = 2 GHz

⎯

3.5

⎯

Insertion Gain

⎪S21e⎪

2 (2)

VCE = 3 V, IC = 20 mA, f = 2 GHz

6.5

⎯

Noise Figure

VCE = 1 V, IC = 5 mA, f = 2 GHz

⎯

2.4

3.2

ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C)

CHARACTERISTICS

SYMBOL

C O N D I T I O N

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0

⎯

0.1

μA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

⎯

0.5

μA

DC Current Gain

hFE

VCE = 1 V, IC = 5 mA

110

⎯

160

⎯

Reverse Transfer Capacitance

Cre (Note)

VCB = 1 V, IE = 0, f = 1 MHz

⎯

0.5

0.7

Transition Frequency

VCE = 1 V, IC = 10 mA

6.5

8.5

⎯

GHz

⎪S21e⎪

2 (1)

VCE = 1 V, IC = 10 mA, f = 2 GHz

⎯

Insertion Gain

⎪S21e⎪

2 (2)

VCE = 3 V, IC = 20 mA, f = 2 GHz

8.5

⎯

Noise Figure

VCE = 1 V, IC = 10 mA, f = 2 GHz

⎯

1.2

Note : Cre is measured by 3 terminal method capacitance bridge.

Caution

This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of

fT=60GHz class is used for this product.

Please make enough tool and equipment earthed when you handle.

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