RN1101

∼RN1106

2007-11-01

1

Type No.

R1 (kΩ)

R2 (kΩ)

RN1101

4.7

4.7

RN1102

10

10

RN1103

22

22

RN1104

47

47

RN1105

2.2

47

RN1106

4.7

47

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101, RN1102, RN1103,

RN1104, RN1105, RN1106

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduced number of parts and simplified manufacturing process

Complementary to RN2101~ RN2106

Equivalent Circuit and Bias Resister Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1101~1106

50

V

RN1101~1104

10

Emitter-base voltage

RN1105, 1106

5

V

Collector current

100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN1101~1106

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

JEDEC

―

EIAJ

―

TOSHIBA

2-2H1A

Weight: 2.4 mg

Unit: mm