RN1107 datasheet(2/6 Pages) TOSHIBA

номер детали	RN1107

подробное описание детали	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

PDF	6 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

RN1107~1109

2007-11-01

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

ICBO

―

VCB = 50 V, IE = 0

―

100

Collector cut off current

RN1107~1109

ICEO

―

VCE = 50 V, IB = 0

―

500

RN1107

―

VEB = 6 V, IC = 0

0.081

―

0.15

RN1108

―

VEB = 7 V, IC = 0

0.078

―

0.145

Emitter cut-off current

RN1109

IEBO

―

VEB = 15 V, IC = 0

0.167

―

0.311

RN1107

―

RN1108

―

DC current gain

RN1109

hFE

―

VCE = 5 V, IC = 10 mA

―

Collector-emitter

saturation voltage

RN1107~1109

VCE (sat)

―

IC = 5 mA, IB = 0.25 mA

―

0.1

0.3

RN1107

―

0.7

―

1.8

RN1108

―

1.0

―

2.6

Input voltage (ON)

RN1109

VI (ON)

―

VCE = 0.2 V, IC = 5 mA

2.2

―

5.8

RN1107

―

0.5

―

1.0

RN1108

―

0.6

―

1.16

Input voltage (OFF)

RN1109

VI (OFF)

―

VCE = 5 V, IC = 0.1 mA

1.5

―

2.6

Translation frequency

RN1107~1109

―

VCE =10 V, IC = 5 mA

―

250

―

MHz

Collector output

capacitance

RN1107~1109

Cob

―

VCB = 10 V, IE = 0,

f = 1 MHz

―

RN1107

―

RN1108

―

15.4

28.6

Input Resistor

RN1109

―

32.9

61.1

kΩ

RN1107

―

0.191

0.213

0.232

RN1108

―

0.421

0.468

0.515

Resistor Ratio

RN1109

R1/R2

―

1.92

2.14

2.35

―

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