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FFSD1065B датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FFSD1065B датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISCD7046 eq FFSD1065B SiC Schottky Diode www.iscsemi.com 1 DESCRIPTION · High Surge Current Capacity · No Reverse Recovery/No Forward Recovery · Ease of Paralleling APPLICATIONS · General Purpose · SMPS, Solar Inverter, UPS · Power Switching Circuits ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 650 V IF Continuous Rectified Forward Current @ TC < 150℃ 10 A IF Continuous Rectified Forward Current @ TC < 135℃ 13.5 A IF, Max Non-Repetitive Peak Forward Surge Current@TC = 25℃, 10us 650 A IF, Max Non-Repetitive Peak Forward Surge Current@TC = 25℃, 10 us 570 A IFSM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 45 A Ptot Power Dissipation@ TC < 25℃ 98 W Ptot Power Dissipation@ TC < 150℃ 16 W TJ Junction Temperature -55~+175 ℃ Tstg Storage Temperature Range -55~+175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 1.53 ℃ /W |
Аналогичный номер детали - FFSD1065B |
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Аналогичное описание - FFSD1065B |
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