SSM3J16FS datasheet(2/5 Pages) TOSHIBA

номер детали	SSM3J16FS

подробное описание детали	Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

PDF	5 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

SSM3J16FS

2007-11-01

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

MIN.

TYP.

MAX.

UNIT

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0

⎯

±1

μA

Drain-Source breakdown voltage

V (BR) DSS

ID = −0.1 mA, VGS = 0

−20

⎯

Drain cut-off current

IDSS

VDS = −20 V, VGS = 0

⎯

−1

μA

Gate threshold voltage

Vth

VDS = −3 V, ID = −0.1 mA

−0.6

⎯

−1.1

Forward transfer admittance

⎪Yfs⎪

VDS = −3 V, ID = −10 mA

⎯

ID = −10 mA, VGS = −4 V

⎯

ID = −10 mA, VGS = −2.5 V

⎯

Drain-Source on-resistance

RDS (ON)

ID = −1 mA, VGS = −1.5 V

⎯

Input capacitance

Ciss

⎯

Reverse transfer capacitance

Crss

⎯

3.7

⎯

Output capacitance

Coss

VDS = −3 V, VGS = 0, f = 1 MHz

⎯

Turn-on time

ton

⎯

130

⎯

Switching time

Turn-off time

toff

VDD = −3 V, ID = − 10 mA,

VGS = 0 ~ −2.5 V

⎯

190

⎯

Switching Time Test Circuit

Precaution

Vth can be expressed as the voltage between the gate and source when the low operating current value is ID =

100

μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off)

requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)

Be sure to take this into consideration when using the device.

VDD = −3 V

Duty <= 1%

VIN: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

= 25°C

−2.5V

μs

VDD

OUT

ton

90%

10%

−2.5 V

0 V

90%

10%

toff

VDS (ON)

VDD

(b) VIN

(a) Test circuit

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