MT3S35FS datasheet(2/4 Pages) TOSHIBA

номер детали	MT3S35FS

подробное описание детали	UHF Low-Noise Amplifier Application

PDF	4 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

MT3S35FS

2007-11-01

Microwave Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Transition frequency

VCE = 3 V, IC = 10 mA, f = 2 GHz

GHz

|S21e|

2 (1)

VCE = 3 V, IC = 10 mA, f = 1 GHz

Insertion gain

|S21e|

2 (2)

VCE = 3 V, IC = 10 mA, f = 2 GHz

NF (1)

VCE = 3 V, IC = 2 mA, f = 1 GHz

1.1

Noise figure

NF (2)

VCE = 3 V, IC = 2 mA, f = 2 GHz

1.4

1.9

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 8 V, IE = 0

µA

Emitter cut-off current

IEBO

VEB = 1 V, IC = 0

µA

DC current gain

hFE

VCE = 3 V, IC = 10 mA

140

Output capacitance

Cob

VCB = 1 V, IE = 0, f = 1 MHz

0.30

0.50

Reverse transistor capacitance

Cre

VCB = 1 V, IE = 0, f = 1 MHz (Note

0.15

0.28

Note 1:

Cre is measured using a three-terminal method with a capacitance bridge.

Note 2:

This product is a lead-free article.

Caution:

This device is sensitive to electrostatic discharge. Be sure to provide all tools and equipment

with adequate grounding.

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