SSM3J15FS datasheet(2/5 Pages) TOSHIBA

номер детали	SSM3J15FS

подробное описание детали	Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

PDF	5 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

SSM3J15FS

2007-11-01

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

MIN.

TYP.

MAX.

UNIT

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0

⎯

±1

μA

Drain-Source breakdown voltage

V (BR) DSS

ID = − 0.1 mA, VGS = 0

−30

⎯

Drain cut-off current

IDSS

VDS = −30 V, VGS = 0

⎯

−1

μA

Gate threshold voltage

Vth

VDS = −3 V, ID =− 0.1 mA

−1.1

⎯

−1.7

Forward transfer admittance

⎪Yfs⎪

VDS = −3 V, ID = −10 mA

⎯

ID = −10 mA, VGS = −4 V

⎯

Drain-Source ON resistance

RDS (ON)

ID = −1 mA, VGS = −2.5 V

⎯

Input capacitance

Ciss

⎯

9.1

⎯

Reverse transfer capacitance

Crss

⎯

3.5

⎯

Output capacitance

Coss

VDS = −3 V, VGS = 0, f = 1 MHz

⎯

8.6

⎯

Turn-on time

ton

⎯

Switching time

Turn-off time

toff

VDD = −5 V, ID = −10 mA,

VGS = 0~−5 V

⎯

175

⎯

Switching Time Test Circuit

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this

product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage

than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )

Please take this into consideration for using the device.

VDD = −5 V

Duty <= 1%

VIN: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

= 25°C

−5V

μs

VDD

OUT

ton

90%

10%

−5 V

0 V

90%

10%

toff

VDS (ON)

VDD

(b) VIN

(a) Test circuit

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