SSM3J01F datasheet(2/5 Pages) TOSHIBA

номер детали	SSM3J01F

подробное описание детали	Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications

PDF	5 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

SSM3J01F

2007-11-01

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0

⎯

±1

μA

Drain-source breakdown voltage

V (BR) DSS

ID = −1 mA, VGS = 0

−30

⎯

Drain cut-off current

IDSS

VDS = −30 V, VGS = 0

⎯

−1

μA

Gate threshold voltage

Vth

VDS = −3 V, ID = −0.1 mA

−0.6

⎯

−1.1

Forward transfer admittance

⎪Yfs⎪

(Note)

VDS = −3 V, ID = −0.35 A

1.0

⎯

ID = −0.35 A, VGS = −4 V

⎯

0.3

0.4

Drain-source ON resistance

RDS (ON )

(Note) ID = −0.35 A, VGS = −2.5 V

⎯

0.4

0.6

Input capacitance

Ciss

VDS = −10 V, VGS = 0, f = 1 MHz

⎯

240

⎯

Reverse transfer capacitance

Crss

VDS = −10 V, VGS = 0, f = 1 MHz

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0, f = 1 MHz

⎯

Turn-on time

ton

⎯

Switching time

Turn-off time

toff

VDD = −15 V, ID = −0.3 A,

VGS = 0~−2.5 V, RG = 4.7 Ω

⎯

Note: Pulse test

Switching Time Test Circuit

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for

this product. For normal switching operation, VGS (ON) requires higher voltage than Vth and VGS (off) requires

lower voltage than Vth.

(Relationship can be established as follows: VGS (off) < Vth < VGS (ON))

Please take this into consideration for using the device.

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