MT3S11FS datasheet(2/3 Pages) TOSHIBA

номер детали	MT3S11FS

подробное описание детали	VHF~UHF Band Low-Noise Amplifier Applications

PDF	3 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 3 page

MT3S11FS

2007-11-01

Microwave Characteristics (Ta = 25°C)

Characteristic

Symbol

Condition

Min

Typ.

Max

Unit

Transition frequency

VCE = 1 V, IC = 5 mA

⎯

GHz

⎪S21e⎪

2 (1)

VCE = 1 V, IC = 5 mA, f = 2 GHz

⎯

3.5

⎯

Insertion gain

⎪S21e⎪

2 (2)

VCE = 3 V, IC = 20 mA, f = 2 GHz

6.5

⎯

Noise figure

VCE = 1 V, IC = 5 mA, f = 2 GHz

⎯

2.4

3.2

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Condition

Min

Typ.

Max

Unit

Collector cutoff current

ICBO

VCB = 5 V, IE = 0

⎯

0.1

μA

Emitter cutoff current

IEBO

VEB = 1 V, IC = 0

⎯

μA

DC current gain

hFE

VCE = 1 V, IC = 5 mA

100

⎯

160

⎯

Reverse transfer capacitance

Cre

VCB = 1 V, IE = 0, f = 1 MHz(Note)

⎯

0.65

0.9

Note: Cre is measured with a three-terminal method using a capacitance bridge.

Caution

This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before

handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the

environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers

and other objects that come into direct contact with devices should be made of antistatic materials.

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