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IL711 датащи(PDF) 8 Page - NVE Corporation |
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IL711 датащи(HTML) 8 Page - NVE Corporation |
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8 / 20 page ![]() IL711/IL712/IL721 8 NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 (952) 829-9217 www.nve.com YouTube.com/NveCorporation iso-apps@nve.com Insulation Specifications Parameter Symbol Min. Typ. Max. Units Test Conditions Creepage Distance (external) MSOP8 3.01 mm SOIC8 4.03 mm PDIP8 6.8 mm True 8™ 0.3" SOIC16 8.03 8.3 mm Per IEC 60601 Total Barrier Thickness (internal) 0.012 0.016 mm Leakage Current(5) 0.2 μ A 240 VRMS, 60 Hz Barrier Resistance(5) RIO >1014 Ω 500 V Barrier Capacitance(5) CIO 2 pF f = 1 MHz Comparative Tracking Index CTI ≥ 600 VRMS Per IEC 60112 High Voltage Endurance (Maximum Barrier Voltage for Indefinite Life) AC DC VIO 1000 1500 VRMS VDC At maximum operating temperature Surge Immunity (“VE” Versions) VIOSM 12.8 kVPK Per IEC 61000-4-5 Barrier Life 44000 Years 100°C, 1000 VRMS, 60% CL activation energy Thermal Characteristics Parameter Symbol Min. Typ. Max. Units Test Conditions Junction–Ambient Thermal Resistance MSOP8 0.15" SOIC8 0.3" SOIC16 PDIP8 θ JA 184 134 67 114 °C/W Double-sided PCB in free air Junction–Case (Top) Thermal Resistance MSOP8 0.15" SOIC8 0.3" SOIC16 PDIP8 θ JC 15 10 12 36 Junction–Ambient Thermal Resistance 0.3" SOIC θ JA 46 2s2p PCB in free air per JESD51 Junction–Case (Top) Thermal Resistance θ JC 9 Power Dissipation MSOP8 0.15" SOIC8 0.3" SOIC16 PDIP8 PD 500 675 1500 800 mW Notes (apply to both 3.3 V and 5 V specifications): 1. Absolute maximum ambient operating temperature means the device will not be damaged if operated under these conditions. It does not guarantee performance. 2. PWD is defined as |tPHL − tPLH|. %PWD is equal to PWD divided by pulse width. 3. tPSK is the magnitude of the worst-case difference in tPHL and/or tPLH between devices at 25°C. 4. CMH and CML are the maximum common mode voltage slew rates that can be applied with the outputs remaining stable and within VOL and VOH specifications. 5. Device is considered a two terminal device: pins 1–4 shorted and pins 5–8 shorted. 6. Dynamic power consumption is calculated per channel and is supplied by the channel’s input side power supply. 7. Minimum pulse width is the minimum value at which specified PWD is guaranteed. 8. The relevant test and measurement methods are given in the Electromagnetic Compatibility section on p. 9. 9. External magnetic field immunity is improved by this factor if the field direction is “end-to-end” rather than to “pin-to-pin” (see diagram on p. 9). 10. 64k-bit pseudo-random binary signal (PRBS) NRZ bit pattern with no more than five consecutive 1s or 0s; 800 ps transition time. |
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