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MP4501 датащи(PDF) 5 Page - Toshiba Semiconductor |
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MP4501 датащи(HTML) 5 Page - Toshiba Semiconductor |
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5 / 6 page ![]() MP4501 2004-07-01 5 Ambient temperature Ta (°C) PT – Ta Total power dissipation PT (W) ΔTj – PT Pulse width tw (s) 40 80 120 160 0 8 2 4 6 200 0 (1) (2) (3) (4) (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board Circuit board (3) 0 160 2 40 80 120 4 6 8 10 0 (4) (2) (1) Attached on a circuit board (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Circuit board Collector-emitter voltage VCE (V) Safe Operating Area 0.01 0.3 1 3 10 0.03 0.05 0.1 0.3 0.5 1 3 5 10 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 30 100 IC max (pulsed)* 100 μs* VCEO max 10 ms* 1 ms* rth – tw 0.001 0.01 0.1 1 10 100 1000 0.3 -No heat sink/Attached on a circuit board- (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Curves should be applied in thermal limited area. (single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (4) (1) 1 3 10 30 100 300 Circuit board (3) (2) |
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