MP4305

2006-10-27

1

TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type

(Four Darlington Power Transistors in One)

MP4305

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive Load

Switching

• Small package by full molding (SIP 12 pin)

• High collector power dissipation (4 devices operation)

• Diode included for absorbing fly-back voltage

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−100

V

Collector-emitter voltage

−100

V

Emitter-base voltage

−6

V

DC

−5

Collector current

Pulse

−8

A

Continuous base current

−0.5

A

Collector power dissipation

(1-device operation)

2.2

W

Collector power dissipation

(4-device operation)

4.4

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-32C1E

Weight: 3.9 g (typ.)

2

4

9

R1 ≈ 4.5 kΩ R2 ≈ 300 Ω

1

5

8

R1 R2

12

11

6

7

3

10