MP4301 datasheet(3/6 Pages) TOSHIBA

3 / 6 page

MP4301

2006-10-27

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 120 V, IE = 0 A

―

μA

Collector cut-off current

ICEO

VCE = 100 V, IB = 0 A

―

μA

Emitter cut-off current

IEBO

VEB = 6 V, IC = 0 A

0.5

―

2.5

Collector-base breakdown voltage

V (BR) CBO

IC = 1 mA, IE = 0 A

120

―

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0 A

100

―

hFE (1)

VCE = 2 V, IC = 1.5 A

2000

―

15000

DC current gain

hFE (2)

VCE = 2 V, IC = 3 A

1000

―

Collector-emitter

VCE (sat)

IC = 1.5 A, IB = 3 mA

―

1.5

Saturation voltage

Base-emitter

VBE (sat)

IC = 1.5 A, IB = 3 mA

―

2.0

Transition frequency

VCE = 2 V, IC = 0.5 A

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0 A, f = 1 MHz

―

Turn-on time

ton

―

0.3

―

Storage time

tstg

―

2.0

―

Switching time

Fall time

IB1 = −IB2 = 3 mA, duty cycle ≤ 1%

―

0.4

―

μs

Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Maximum forward current

IFM

―

Surge current

IFSM

t = 1 s, 1 shot

―

Forward voltage

IF = 1 A, IB = 0 A

―

1.2

1.8

Forward voltage

trr

―

1.0

―

μs

Reverse recovery charge

Qrr

IF = 3 A, VBE = −3 V, dIF/dt = −50 A/μs

―

μC

Flyback-Diode Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Maximum forward current

IFM

―

Reverse current

VR = 120 V

―

0.4

μA

Reverse voltage

IR = 100 μA

120

―

Forward voltage

IF = 0.5 A

―

1.8

20 μs

VCC = 30 V

Output

IB2

IB1

Input

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