RN2102 datasheet(2/8 Pages) TOSHIBA

номер детали	RN2102

подробное описание детали	Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

PDF	8 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

Logo

2 / 8 page

RN2101

∼RN2106

2007-11-01

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = −50 V, IE = 0

―

−100

Collector cut-off

current

RN2101~2106

ICEO

―

VCE = −50 V, IB = 0

―

−500

RN2101

−0.82

―

−1.52

RN2102

−0.38

―

−0.71

RN2103

−0.17

―

−0.33

RN2104

VEB = −10 V, IC = 0

−0.082

―

−0.15

RN2105

−0.078

―

−0.145

Emitter cut-off current

RN2106

IEBO

―

VEB = −5 V, IC = 0

−0.074

―

−0.138

RN2101

―

RN2102

―

RN2103

―

RN2104

―

RN2105

―

DC current gain

RN2106

hFE

―

VCE = −5 V,

IC = −10 mA

―

Collector-emitter

saturation voltage

RN2101~2106

VCE (sat)

―

IC = −5 mA,

IB = −0.25 mA

―

−0.1

−0.3

RN2101

−1.1

―

−2.0

RN2102

−1.2

―

−2.4

RN2103

−1.3

―

−3.0

RN2104

−1.5

―

−5.0

RN2105

−0.6

―

−1.1

Input voltage (ON)

RN2106

VI (ON)

―

VCE = −0.2 V,

IC = −5 mA

−0.7

―

−1.3

RN2101~2104

−1.0

―

−1.5

Input voltage (OFF)

RN2105, 2106

VI (OFF)

―

VCE = −5 V,

IC = −0.1 mA

−0.5

―

−0.8

Transition frequency

RN2101~2106

―

VCE = −10 V,

IC = −5 mA

―

200

―

MHz

Collector Output

capacitance

RN2101~2106

Cob

―

VCB = −10 V, IE = 0,

f = 1 MHz

―

RN2101

3.29

4.7

6.11

RN2102

RN2103

15.4

28.6

RN2104

32.9

61.1

RN2105

1.54

2.2

2.86

Input resistor

RN2106

―

3.29

4.7

6.11

kΩ

RN2101~2104

0.9

1.0

1.1

RN2105

0.0421 0.0468 0.0515

Resistor ratio

RN2106

R1/R2

―

0.09

0.1

0.11

RN2102 датащи(PDF) 2 Page - Toshiba Semiconductor

RN2102 датащи(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5 6 7 8

датащи скачать

ссылки URL