RN1421

∼RN1427

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1421,RN1422,RN1423,RN1424

RN1425,RN1426,RN1427

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2401~RN2406

Equivalent Circuit and Bias Resister Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1421~1427

50

V

RN1421~1424

10

RN1425, 1426

5

Emitter-base voltage

RN1427

6

V

Collector current

800

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

RN1421~1427

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

Type No.

R1 (kΩ)

R2 (kΩ)

RN1421

1

1

RN1422

2.2

2.2

RN1423

4.7

4.7

RN1424

10

10

RN1425

0.47

10

RN1426

1

10

RN1427

2.2

10