RN1414

∼RN1418

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1414, RN1415, RN1416,RN1417, RN1418

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduced number of parts and simplified manufacturing process

Complementary to RN2414~RN2418

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1414

1

10

RN1415

2.2

10

RN1416

4.7

10

RN1417

10

4.7

RN1418

47

10

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1414~1418

50

V

RN1414

5

RN1415

6

RN1416

7

RN1417

15

Emitter-base voltage

RN1418

25

V

Collector current

100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

RN1414~1418

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

JEDEC

SC-236MOD

EIAJ

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g

Unit: mm