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LP38501-ADJ датащи(PDF) 13 Page - National Semiconductor (TI) |
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LP38501-ADJ датащи(HTML) 13 Page - National Semiconductor (TI) |
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13 / 16 page ![]() should be isolated from "clean" circuits where possible, and grounded through a separate path. At MHz frequencies, ground planes begin to look inductive and RFI/EMI can cause ground bounce across the ground plane. In multi-layer PC Board applications, care should be taken in layout so that noisy power and ground planes do not radiate directly into adjacent layers which carry analog power and ground. OUTPUT NOISE Noise is specified in two ways- Spot Noise or Output noise density is the RMS sum of all noise sources, measured at the regulator output, at a specific frequency (measured with a 1Hz bandwidth). This type of noise is usually plotted on a curve as a function of frequency. Total output noise voltage or Broadband noise is the RMS sum of spot noise over a specified bandwidth, usually several decades of frequencies. Attention should be paid to the units of measurement. Spot noise is measured in units µV/ √Hz or nV/√Hz and total output noise is measured in µV(rms). The primary source of noise in low-dropout regulators is the internal reference. In CMOS regulators, noise has a low frequency component and a high frequency component, which depend strongly on the silicon area and quiescent current. Noise can generally be reduced in two ways: increase the transistor area or increase the reference current. However, enlarging the transisitors will increase die size, and increasing the reference current means higher total supply current (ground pin current). SHORT-CIRCUIT PROTECTION The LP38501/3-ADJ contains internal current limiting which will reduce output current to a safe value if the output is over- loaded or shorted. Depending upon the value of V IN, thermal limiting may also become active as the average power dissi- pated causes the die temperature to increase to the limit value (about 170°C). The hysteresis of the thermal shutdown cir- cuitry can result in a “cyclic” behavior on the output as the die temperature heats and cools. ENABLE OPERATION (LP38501-ADJ Only) The Enable pin (EN) must be actively terminated by either a 10 k Ω pull-up resistor to V IN, or a driver which actively pulls high and low (such as a CMOS rail to rail comparator). If active drive is used, the pull-up resistor is not required. This pin must be tied to V IN if not used (it must not be left floating). DROPOUT VOLTAGE The dropout voltage of a regulator is defined as the input-to- output differential required by the regulator to keep the output voltage within 2% of the nominal value. For CMOS LDOs, the dropout voltage is the product of the load current and the R DS(on) of the internal MOSFET pass element. Since the output voltage is beginning to “drop out” of regula- tion when it drops by 2%, electrical performance of the device will be reduced compared to the values listed in the Electrical Characteristics table for some parameters (line and load reg- ulation and PSRR would be affected). REVERSE CURRENT PATH The internal MOSFET pass element in the LP38501/3-ADJ has an inherent parasitic diode. During normal operation, the input voltage is higher than the output voltage and the para- sitic diode is reverse biased. However, if the output is pulled above the input in an application, then current flows from the output to the input as the parasitic diode gets forward biased. The output can be pulled above the input as long as the cur- rent in the parasitic diode is limited to 200 mA continuous and 1A peak. The regulator output pin should not be taken below ground potential. If the LP38501/3-ADJ is used in a dual-sup- ply system where the regulator load is returned to a negative supply, the output must be diode-clamped to ground. POWER DISSIPATION/HEATSINKING The maximum power dissipation (P D(MAX)) of the LP38501/3- ADJ is limited by the maximum junction temperature of 125°C, along with the maximum ambient temperature (T A (MAX)) of the application, and the thermal resistance (θJA) of the package. Under all possible conditions, the junction tem- perature (T J) must be within the range specified in the Oper- ating Ratings. The total power dissipation of the device is given by: P D = ( (VIN − VOUT) x IOUT) + (VIN x IGND) (1) where I GND is the operating ground current of the device (specified under Electrical Characteristics). The maximum allowable junction temperature rise ( ΔT J) de- pends on the maximum expected ambient temperature (T A(MAX)) of the application, and the maximum allowable junc- tion temperature (T J(MAX)): ΔT J = TJ(MAX)− TA(MAX) (2) The maximum allowable value for junction to ambient Ther- mal Resistance, θ JA, can be calculated using the formula: θ JA = ΔTJ / PD(MAX) (3) The LP38501/3-ADJ is available in the TO-263 package. The thermal resistance depends on the amount of copper area allocated to heat transfer. HEATSINKING TO-263, TO-263 THIN PACKAGES The TO-263 package and TO-263 THIN package use the copper plane on the PCB as a heatsink. The DAP of the pack- age is soldered to the copper plane for heat sinking. Figure 12 shows a typical curve for the θ JA of the TO-263 package for different copper area sizes (the thermal performance of both the TO-263 and TO-263 THIN are the same). The tests were done using a PCB with 1 ounce copper on top side only which were square in shape. 13 www.national.com |
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