2SC6077 datasheet(1/5 Pages) TOSHIBA

номер детали	2SC6077

подробное описание детали	Silicon NPN Epitaxial Type (PCT Process)

PDF	5 Pages

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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1 / 5 page

2SC6077

2006-10-20

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC6077

○

Power Amplifier Applications

○

Power Switching Applications

• Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A）

• High-speed switching: tstg = 0.4 μs (typ)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

VCBO

160

V

VCEX

160

V

Collector-emitter voltage

VCEO

80

V

Emitter-base voltage

VEBO

9

V

DC

IC

3.0

A

Collector current

Pulse

ICP

5.0

A

Base current

IB

1.0

A

Collector power dissipation

PC

1.8

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55～150

°C

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Conditions

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 160 V, IE = 0

－

1.0

uA

Emitter cut-off current

IEBO

VEB = 9 V, IC = 0

－

1.0

uA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

80

－

V

hFE (1)

VCE = 2 V, IC = 1 mA

150

－

hFE (2)

VCE = 2 V, IC = 0.5 A

180

－

450

DC current gain

hFE (3)

VCE = 2 V, IC = 1 A

100

－

VCE (sat) (1) IC = 0.5 A, IB = 50 mA

－

0.3

V

Collector emitter saturation voltage

VCE (sat) (2) IC = 1 A, IB = 100 mA

－

0.5

V

Base-emitter saturation voltage

VBE (sat)

IC = 1 A, IB = 100 mA

－

1.5

V

Transition frequency

fT

VCE = 2 V, IC = 0.5 A

－

150

－

MHZ

Collector output capacitance

Cob

VCB = 10 V, IE = 0,f = 1MHZ

－

14

－

pF

Rise time

tr

－

0.05

－

Storage time

tstg

－

0.4

－

Switching time

Fall time

tf

IB1 = −IB2 = 100 mA

Duty cycle ≦1%

－

0.15

－

us

Unit: mm

JEDEC

－

JEITA

－

TOSHIBA

2-10T1A

Weight:1.5g(typ)

1 : BASE

2 : COLLECTOR（HEAT SINK）

3 : EMITTER

20 μs

VCC = 24 V

Output

IB2

IB1

Input

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