2SC6076

2006-11-16

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC6076

Power Amplifier Applications

Power Switching Applications

Characteristic

Symbol

Rating

Unit

Collector-base voltage

160

V

Collector-emitter voltage

160

V

Collector-emitter voltage

80

V

Emitter-base voltage

9

V

DC

3

A

Collector current

Pulse

5

A

Base current

1.5

A

Collector power dissipation

Tc = 25℃

10

W

Junction temperature

150

°C

Storage temperature range

−55～150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7J1A

Weight:0.36g(typ)

1 : BASE

2 : COLLECTOR（HEAT SINK）

3 : EMITTER