2SJ167 datasheet(2/5 Pages) TOSHIBA

номер детали	2SJ167

подробное описание детали	Silicon P Channel MOS Type

PDF	5 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SJ167

2007-11-01

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0

⎯

±100

Drain cut-off current

IDSS

VDS = −60 V, VGS = 0

⎯

−10

μA

Drain-source breakdown voltage

V (BR) DSS

ID = −1 mA, VGS = 0

−60

⎯

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−2

⎯

−3.5

Forward transfer admittance

⎪Yfs⎪

VDS = −10 V, ID = −50 mA

100

⎯

Drain-source ON resistance

RDS (ON)

ID = −50 mA, VGS = −10 V

⎯

1.3

2.0

Drain-source ON voltage

VDS (ON)

ID = −50 mA, VGS = −10 V

⎯

−65

−100

Input capacitance

Ciss

VDS = −10 V, VGS = 0, f = 1 MHz

⎯

Reverse transfer capacitance

Crss

VDS = −10 V, VGS = 0, f = 1 MHz

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0, f = 1 MHz

⎯

Rise time

⎯

Turn-on time

ton

⎯

Fall time

⎯

Switching time

Turn-off time

toff

VIN: tr, tf < 5 ns

D.U. <= 1% (Zout = 50 Ω)

⎯

100

⎯

Note: This transistor is the electrostatic sensitive device.

Please handle with caution.

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