2SC2716

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2716

High Frequency Amplifier Applications

AM High Frequency Amplifier Applications

AM Frequency Converter Applications

• Low noise figure: NF = 3.5dB (max) (f = 1 MHz)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

35

V

Collector-emitter voltage

30

V

Emitter-base voltage

4

V

Collector current

100

mA

Emitter current

−100

mA

Collector power dissipation

150

wW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

0.1

μA

Emitter cut-off current

⎯

⎯

1.0

μA

DC current gain

(Note)

40

⎯

240

Collector-emitter saturation voltage

⎯

⎯

0.4

V

Base-emitter saturation voltage

⎯

⎯

1.0

V

Transition frequency

80

120

⎯

MHz

Reverse transfer capacitance

⎯

2.2

3.0

pF

Collector-base time constant

⎯

30

50

ps

Noise figure

NF

⎯

2.0

3.5

dB

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)