2SC2714 datasheet(1/8 Pages) TOSHIBA

номер детали	2SC2714

подробное описание детали	Silicon NPN Epitaxial Planar Type (PCT process)

PDF	8 Pages

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2SC2714

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)

2SC2714

High Frequency Amplifier Applications

FM, RF, MIX,IF Amplifier Applications

• Small reverse transfer capacitance: Cre = 0.7 pF (typ.)

• Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

40

V

Collector-emitter voltage

VCEO

30

V

Emitter-base voltage

VEBO

4

V

Collector current

IC

20

mA

Base current

IB

4

mA

Collector power dissipation

PC

100

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 18 V, IE = 0

⎯

0.5

μA

Emitter cut-off current

IEBO

VEB = 4 V, IC = 0

⎯

0.5

μA

DC current gain

hFE

(Note)

VCE = 6 V, IC = 1 mA

40

⎯

200

Reverse transfer capacitance

Cre

VCB = 6 V, f = 1 MHz

⎯

0.70

⎯

pF

Transition frequency

fT

VCE = 6 V, IC = 1 mA

⎯

550

⎯

MHz

Collector-base time constant

Cc･rbb’

VCE = 6 V, IE = −1 mA, f = 30 MHz

⎯

30

ps

Noise figure

NF

⎯

2.5

5.0

dB

Power gain

Gpe

VCE = 6 V, IE = −1 mA, f = 100 MHz,

Figure 1

17

23

⎯

dB

Note: hFE classification R: 40~80, O: 70~140, Y: 100~200

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

Аналогичный номер детали - 2SC2714

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