1SS403

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS403

High Voltage Switching Applications

Two-pin small packages are suitable for higher mounting densities.

Excellent in forward current and forward voltage

characteristics

Fast reverse recovery time

Small total capacitance

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

250

V

Reverse voltage

200

V

Maximum (peak) forward current

300

mA

Average forward current

100

mA

Surge current (10ms)

2

A

Power dissipation

P

200 *

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: When mounted on a glass epoxy board PCB: 20 mm × 20 mm,

with copper pad 4 mm × 4 mm.

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.72

1.0

Forward voltage

―

―

0.90

1.2

V

―

―

―

0.1

Reverse current

―

―

―

1.0

μA

Total capacitance

―

―

1.5

3.0

pF

Reverse recovery time

―

―

10

60

ns

JEDEC

―

JEITA

―

TOSHIBA

1-1E1A

Weight: 0.0045g(typ.)

Unit in mm