2SC2655 datasheet(2/5 Pages) TOSHIBA

номер детали	2SC2655

подробное описание детали	Silicon NPN Epitaxial Type (PCT Process)

PDF	5 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC2655

2006-11-09

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 50 V, IE = 0

―

1.0

μA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

―

1.0

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

―

hFE (1)

(Note)

VCE = 2 V, IC = 0.5 A

―

240

DC current gain

hFE (2)

VCE = 2 V, IC = 1.5 A

―

Collector-emitter saturation voltage

VCE (sat)

IC = 1 A, IB = 0.05 A

―

0.5

Base-emitter saturation voltage

VBE (sat)

IC = 1 A, IB = 0.05 A

―

1.2

Transition frequency

VCE = 2 V, IC = 0.5 A

―

100

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IC = 0, f = 1 MHz

―

Turn-on time

ton

―

0.1

―

Storage time

tstg

―

1.0

―

Switching time

Fall time

IB1 = −IB2 = 0.05 A, duty cycle ≤ 1%

―

0.1

―

μs

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

20 μs

30 V

Output

IB2

IB1

Input

C2655

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Characteristics

indicator

Part No. (or abbreviation code)

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