1SS392

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS392

High Speed Switching Application

Low forward voltage

Low reverse current

Small package

: SC-59

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

45

V

Reverse voltage

40

V

Maximum (peak) forward current

300 *

mA

Average forward current

100 *

mA

Surge current (10ms)

1 *

A

Power dissipation

P

150 *

mW

Junction temperature

125

°C

Storage temperature range

−55

∼125

°C

Operating temperature range

−40

∼100

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Unit rating. Total rating = unit rating × 1.5

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.28

―

―

―

0.36

―

Forward voltage

―

―

0.54

0.60

V

Reverse current

―

―

―

5

μA

Total capacitance

―

―

18

25

pF

JEDEC

TO-236MOD

EIAJ

SC-59

TOSHIBA

1-3G1F

Weight: 0.012g

Unit: mm