2SC5376F

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5376F

Audio Frequency General Purpose Amplifier Applications

For Muting and Switching Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

15

V

Collector-emitter voltage

12

V

Emitter-base voltage

5

V

Collector current

400

mA

Base current

50

mA

Collector power dissipation

100

mW

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2HA1A

F A

Type Name