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2SC5368 датащи(PDF) 3 Page - Toshiba Semiconductor |
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2SC5368 датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SC5368 2006-11-10 3 Collector current IC (A) VBE (sat) – IC Collector-emitter voltage VCE (V) Safe Operating Area hFE – IC Collector current IC (A) Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) VCE (sat) – IC 0 0 0.8 1.6 2 4 6 8 IB = 0.01 A 0.1 0.15 0.04 0.02 10 0.4 1.2 2 0.03 0.05 0.2 0.25 0.3 Common emitter Tc = 25°C 0 0 2 0.5 1 1.5 Common emitter VCE = 5 V 1 3 4 Tc = 100°C 25 −55 100 3 0.01 Common emitter VCE = 5 V 5 10 30 50 0.05 0.1 1 Tc = 100°C 25 −55 0.03 0.3 3 1 0.5 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.3 3 10 100 0.03 0.1 0.01 0.03 1 3 10 IC max (continuous) IC max (pulsed)* 10 ms* 100 ms* DC operation Tc = 25°C 1000 VCEO max 1 30 300 0.1 0.3 1 ms* 0.1 0.03 0.5 0.05 0.1 0.3 0.5 2 1 0.3 1 0.3 Tc = 100°C 25 −55 Common emitter IC/IB = 8 20 0.5 10 0.01 0.03 0.1 0.3 1 3 10 3 1 5 0.05 0.3 0.1 Common emitter IC/IB = 8 Tc = 100°C 25 −55 |
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