2SC5352

2006-11-10

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5352

Switching Regulator and High-Voltage Switching

Applications

High-Speed DC-DC Converter Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

600

V

Collector-emitter voltage

400

V

Emitter-base voltage

7

V

DC

10

Collector current

Pulse

15

A

Base current

5

A

Collector power dissipation

(Tc = 25°C)

80

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-16C1A

Weight: 4.7 g (typ.)