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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5233 датащи(PDF) 2 Page - Toshiba Semiconductor |
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2SC5233 датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SC5233 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 15 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA DC current gain hFE (Note) VCE = 2 V, IC = 10 mA 300 ⎯ 1000 VCE (sat) (1) IC = 10 mA, IB = 0.5 mA ⎯ 15 30 Collector-emitter saturation voltage VCE (sat) (2) IC = 200 mA, IB = 10 mA ⎯ 110 250 mV Base-emitter saturation voltage VBE (sat) IC = 200 mA, IB = 10 mA ⎯ 0.87 1.2 V Transition frequency fT VCE = 2 V, IC = 10 mA 80 130 ⎯ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 4.2 ⎯ pF Collector-emitter on resistance Ron IB = 1 mA, Vin = 1 Vrms, f = 1 kHz ⎯ 0.9 ⎯ Ω Turn-on time ton ⎯ 85 ⎯ Storage time tstg ⎯ 170 ⎯ Switching time Fall time tf Duty cycle <= 2% IB1 = −IB2 = 5 mA ⎯ 40 ⎯ ns Note: hFE classification A: 300~600, B: 500~1000 |
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