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2SC5171 датащи(PDF) 3 Page - Toshiba Semiconductor |
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2SC5171 датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SC5171 2006-11-10 3 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) VCE (sat) – IC Collector current IC (A) hFE – IC Collector-emitter voltage VCE (V) Safe Operating Area 2.0 0 0 0.4 0.8 1.2 1.6 2.0 0.4 0.8 1.2 1.6 Common emitter VCE = 5 V 25°C −25°C Tc = 100°C 1 0.01 0.01 0.1 0.1 1 10 Common emitter IC/IB = 10 Tc = 25°C Tc = −25°C Tc = 100°C 2.0 0 0 Common emitter Tc = 25°C 4 IB = 2 mA 2 4 6 8 10 0.4 0.8 1.2 1.6 100 150 50 40 30 20 10 8 6 0.01 3 10 30 100 300 1000 0.03 0.05 0.1 0.3 0.5 1 3 5 IC max (pulsed)* 1 ms* IC max (continuous) DC operation Tc = 25°C 10 ms* 100 ms* VCEO max *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 100 μs* 1000 3 0.01 0.1 10 1 10 100 Common emitter VCE = 5 V Tc = 100°C Tc = −25°C Tc = 25°C 30 300 |
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