2SC5108 datasheet(1/6 Pages) TOSHIBA

номер детали	2SC5108

подробное описание детали	Silicon NPN Epitaxial Planar Type For VCO Application

PDF	6 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

Logo

1 / 6 page

2SC5108

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5108

For VCO Application

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

20

V

Collector-emitter voltage

VCEO

10

V

Emitter-base voltage

VEBO

3

V

Base current

IB

15

mA

Collector current

IC

30

mA

Collector power dissipation

PC

100

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 10 V, IE = 0

⎯

0.1

μA

Emitter cut-off current

IEBO

VEB = 1 V, IC = 0

⎯

0.1

μA

DC current gain

hFE

(Note 1)

VCE = 5 V, IC = 5 mA

80

⎯

240

Transition frequency

fT

VCE = 5 V, IC = 5 mA

4

6

⎯

GHz

Insertion gain

⎪S21e⎪

2

VCE = 5 V, IC = 5 mA, f = 1 GHz

7

11

⎯

dB

Output capacitance

Cob

⎯

0.7

⎯

pF

Reverse transfer capacitance

Cre

VCB = 5 V, IE = 0, f = 1 MHz

(Note 2)

⎯

0.5

0.9

pF

Collector-base time constant

Cc･rbb’

VCB = 5 V, IC = 3 mA, f = 30 MHz

⎯

5.5

10

ps

Note 1: hFE classification O: 80~160, Y: 120~240

Note 2: Cre is measured by 3 terminal method with capacitance bridge.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)

Аналогичный номер детали - 2SC5108

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC5108	236Kb / 4P	NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATIONS)
	2SC5108	342Kb / 6P	For VCO Application
	2SC5108-Y	342Kb / 6P	For VCO Application
	2SC5108FT	73Kb / 1P	NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)
	2SC5108FT	120Kb / 2P	Silicon NPN Epitaxial Planar Type For VCO Application

More results

Аналогичное описание - 2SC5108

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC5106	236Kb / 4P	NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)
	2SC5107	235Kb / 4P	NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)
	2SC5108FT	73Kb / 1P	NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)
	2SC5109	246Kb / 4P	NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)
	2SC5110	237Kb / 4P	NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)
	2SC5111	237Kb / 4P	NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)
	2SC5111FT	73Kb / 1P	NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)
Panasonic Semiconductor	MA26V07	72Kb / 3P	Silicon epitaxial planar type For VCO
Toshiba Semiconductor	2SC5108FT	120Kb / 2P	Silicon NPN Epitaxial Planar Type For VCO Application
Toshiba Semiconductor	2SC5110	674Kb / 6P	Silicon NPN Epitaxial Planar Type For VCO Application

More results

2SC5108 датащи(PDF) 1 Page - Toshiba Semiconductor

2SC5108 датащи(HTML) 1 Page - Toshiba Semiconductor

Аналогичный номер детали - 2SC5108

Аналогичное описание - 2SC5108

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL