2SC5088

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5088

VHF~UHF Band Low Noise Amplifier Applications

• Low noise figure, high gain.

Characteristics

Symbol

Rating

Unit

Collector-base voltage

20

V

Collector-emitter voltage

12

V

Emitter-base voltage

3

V

Base current

40

mA

Collector current

80

mA

Collector power dissipation

100

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/

“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Transition frequency

5

7

⎯

GHz

⎯

18

⎯

Insertion gain

9.5

13

⎯

dB

NF (1)

⎯

1

⎯

Noise figure

NF (2)

⎯

1.1

2

dB

Unit: mm

1.Emitter1

2.Collector

3.Emitter2

4.Base

JEDEC

―

JEITA

―

TOSHIBA

2-2K1A

Weight: 0.006 g (typ.)

USQ