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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5065 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC5065 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 7 page  2SC5065 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 5 V, IC = 10 mA 5 7 ⎯ GHz ⎪S21e⎪ 2 (1) VCE = 5 V, IC = 10 mA, f = 500 MHz ⎯ 17 ⎯ Insertion gain ⎪S21e⎪ 2 (2) VCE = 5 V, IC = 10 mA, f = 1 GHz 8.5 12 ⎯ dB NF (1) VCE = 5 V, IC = 3 mA, f = 500 MHz ⎯ 1 ⎯ Noise figure NF (2) VCE = 5 V, IC = 3 mA, f = 1 GHz ⎯ 1.1 2.0 dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 1 μA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA DC current gain hFE (Note 1) VCE = 5 V, IC = 10 mA 80 ⎯ 240 Output capacitance Cob ⎯ 0.7 ⎯ pF Reverse transfer capacitance Cre VCB = 5 V, IE = 0, f = 1 MHz (Note 2) ⎯ 0.45 0.9 pF Note 1: hFE classification O: 80~160, Y: 120~240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. Unit: mm JEDEC ― JEITA SC-70 TOSHIBA 2-3E1A Weight: 0.006 g (typ.) |
Аналогичный номер детали - 2SC5065 |
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Аналогичное описание - 2SC5065 |
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