2SC4682

2006-11-10

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC4682

Strobe Flash Applications

Medium Power Amplifier Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

30

V

30

Collector-emitter voltage

15

V

Emitter-base voltage

6

V

DC

3

Collector current

Pulse

6

A

Base current

0.8

A

Collector power dissipation

900

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

TO-92MOD

JEITA

―

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)