2SC3328

2006-11-09

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3328

Power Amplifier Applications

Power Switching Applications

• Complementary to 2SA1315

Characteristics

Symbol

Rating

Unit

Collector-base voltage

80

V

Collector-emitter voltage

80

V

Emitter-base voltage

5

V

Collector current

2

A

Base current

1

A

Collector power dissipation

900

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

TO-92MOD

JEITA

―

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)