2SC2879A

2007-11-01

1

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

2SC2879A

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS

(LOW SUPPLY VOLTAGE USE)

Specified 12.5V, 28MHz Characteristics

Output Power

Power Gain

: Gp = 13dB

Collector Efficiency

Intermodulation Distortion: IMD = −24dB(Max.)

(MIL Standard)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

45

V

Collector-Emitter Voltage

45

V

Collector-Emitter Voltage

18

V

Emitter-Base Voltage

4

V

Collector Current

25

A

Collector Power Dissipation

250

W

Junction Temperature

175

°C

Storage Temperature Range

−65~175

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

MARKING

Dot

Lot No.

JEDEC

—

EIAJ

—

TOSHIBA

2–13B1A

Weight: 5.2g

Unit in mm

2SC2879

TOSHIBA

JAPAN